Invention Grant
US08669141B2 Capped integrated device with protective cap, composite wafer incorporating integrated devices and process for bonding integrated devices with respective protective caps
有权
带保护帽的带盖的集成设备，集成了集成设备的复合晶片和用于将集成设备与相应保护盖结合的过程
- Patent Title: Capped integrated device with protective cap, composite wafer incorporating integrated devices and process for bonding integrated devices with respective protective caps
- Patent Title (中): 带保护帽的带盖的集成设备，集成了集成设备的复合晶片和用于将集成设备与相应保护盖结合的过程
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Application No.: US13797154Application Date: 2013-03-12
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Publication No.: US08669141B2Publication Date: 2014-03-11
- Inventor: Alessandro Freguglia , Luigi Esposito
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group PLLC
- Priority: ITTO2009A0492 20090629
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/3205
Abstract:
A capped integrated device includes a semiconductor chip, incorporating an integrated device and a protective cap, bonded to the semiconductor chip for protection of the integrated device by means of a bonding layer made of a bonding material. The bonding material forms anchorage elements within recesses, formed in at least one between the semiconductor chip and the protective cap.
Public/Granted literature
Information query
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