Invention Grant
- Patent Title: Method of improving ion beam quality in an implant system
- Patent Title (中): 改善植入系统离子束质量的方法
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Application No.: US13796639Application Date: 2013-03-12
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Publication No.: US08669538B1Publication Date: 2014-03-11
- Inventor: Bon-Woong Koo , Christopher J. Leavitt , Peter F. Kurunczi , Timothy J. Miller , Svetlana B. Radovanov
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J49/10 ; H01L21/265

Abstract:
A system for improving ion beam quality is disclosed. According to one embodiment, the system comprises an ion source, having a chamber defined by a plurality of chamber walls; an RF antenna disposed on a first wall of the plurality of chamber walls; a second wall, opposite the first wall, the distance between the first wall and the second wall defining the height of the chamber; an aperture disposed on one of the plurality of chamber walls; a first gas inlet for introducing a first source gas to the chamber; and a second gas inlet for introducing a second source gas, different from the first source gas, to the chamber; wherein a first distance from the first gas inlet to the second wall is less than 35% of the height; and a second distance from the second gas inlet to the first wall is less than 35% of the height.
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