Thin film transistors

Invention Grant

US08669553B2 Thin film transistors 有权

Title translation: 薄膜晶体管

Please log in to see more content

Patent Title: Thin film transistors
Patent Title (中): 薄膜晶体管
Application No.: US13704012

Application Date: 2010-07-02
Publication No.: US08669553B2

Publication Date: 2014-03-11
Inventor: Chris Knutson , Rick Presley , John F. Wager , Douglas Keszler , Randy Hoffman
Applicant: Chris Knutson , Rick Presley , John F. Wager , Douglas Keszler , Randy Hoffman
Applicant Address: US TX Houston US OR Corvallis
Assignee: Hewlett-Packard Development Company, L.P.,Oregon State University
Current Assignee: Hewlett-Packard Development Company, L.P.,Oregon State University
Current Assignee Address: US TX Houston US OR Corvallis
International Application: PCT/US2010/040924 WO 20100702
International Announcement: WO2012/002974 WO 20120105
Main IPC: H01L21/84
IPC: H01L21/84 ; H01L29/12

Abstract:

A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.

Abstract(Chinese):

薄膜晶体管包括栅电极，设置在栅电极上的栅极电介质，沟道层和钝化层。沟道层具有第一表面和相对的第二表面，其中第一表面设置在栅极电介质的至少一部分上方。沟道层还具有包含至少一个预定阳离子的第一氧化物组合物。钝化层设置成与沟道层的相对的第二表面的至少一部分相邻。钝化层具有第二氧化物组合物，其包含第一氧化物组合物的至少一种预定阳离子和增加钝化层相对于沟道层的带隙的至少一种另外的阳离子。

Public/Granted literature

US20130092931A1 THIN FILM TRANSISTORS Public/Granted day:2013-04-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体