发明授权
US08669608B2 Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device
有权
用于制造非易失性半导体存储装置和非易失性半导体存储装置的方法
- 专利标题： Method for manufacturing nonvolatile semiconductor storage device and nonvolatile semiconductor storage device
- 专利标题（中）： 用于制造非易失性半导体存储装置和非易失性半导体存储装置的方法
-
申请号： US13419984申请日： 2012-03-14
-
公开(公告)号： US08669608B2公开(公告)日： 2014-03-11
- 发明人: Mitsuru Sato , Megumi Ishiduki , Masaru Kidoh , Atsushi Konno , Yoshihiro Akutsu , Masaru Kito , Yoshiaki Fukuzumi , Ryota Katsumata
- 申请人： Mitsuru Sato , Megumi Ishiduki , Masaru Kidoh , Atsushi Konno , Yoshihiro Akutsu , Masaru Kito , Yoshiaki Fukuzumi , Ryota Katsumata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-206893 20110922
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
According to one embodiment, a method for manufacturing a nonvolatile semiconductor storage device includes; forming a first and a second stacked bodies; forming a through hole penetrating through the first stacked body, a second portion communicating with the first portion and penetrating through a select gate, and a third portion communicating with the second portion and penetrating through a second insulating layer; forming a memory film, a gate insulating film, and a channel body; forming a third insulating layer inside the channel body; forming a first embedded portion above a boundary portion inside the third portion; exposing the channel body by removing part of the first embedded portion and part of the third insulating layer in the third portion; and embedding a second embedded portion including silicon having higher impurity concentration than the first embedded portion above the first embedded portion inside the third portion.
公开/授权文献
信息查询
IPC分类:
