Invention Grant
- Patent Title: Semiconductor element, manufacturing method thereof and operating method thereof
- Patent Title (中): 半导体元件及其制造方法及其工作方法
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Application No.: US13493311Application Date: 2012-06-11
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Publication No.: US08669639B2Publication Date: 2014-03-11
- Inventor: Chih-Ling Hung , Chien-Wen Chu , Hsin-Liang Chen , Wing-Chor Chan
- Applicant: Chih-Ling Hung , Chien-Wen Chu , Hsin-Liang Chen , Wing-Chor Chan
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/735
- IPC: H01L29/735

Abstract:
A semiconductor element, a manufacturing method thereof and an operating method thereof are provided. The semiconductor element includes a substrate, a first well, a second well, a third well, a fourth well, a bottom layer, a first heavily doping region, a second heavily doping region, a third heavily doping region and a field plane. The first well, the bottom layer and the second well surround the third well for floating the third well and the substrate. The first, the second and the third heavily doping regions are disposed in the first, the second and the third wells respectively. The field plate is disposed above a junction between the first well and the fourth well.
Public/Granted literature
- US20130328170A1 SEMICONDUCTOR ELEMENT, MANUFACTURING METHOD THEREOF AND OPERATING METHOD THEREOF Public/Granted day:2013-12-12
Information query
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