发明授权
- 专利标题： Hydrogen passivation of integrated circuits
- 专利标题（中）： 集成电路的氢钝化
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申请号： US12890137申请日： 2010-09-24
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公开(公告)号： US08669644B2公开(公告)日： 2014-03-11
- 发明人: Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- 申请人： Gul B. Basim , Scott R. Summerfelt , Ted S. Moise
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Rose Alyssa Keagy; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H01L23/522
- IPC分类号： H01L23/522
摘要：
An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an integrated circuit having a hydrogen or deuterium releasing layer. Method for forming an integrated circuit having a passivation trapping layer.
公开/授权文献
- US20110079884A1 Hydrogen Passivation of Integrated Circuits 公开/授权日：2011-04-07