Invention Grant
- Patent Title: Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element
- Patent Title (中): 接触垫的处理方法，接触垫的制造方法以及集成电路元件
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Application No.: US12907683Application Date: 2010-10-19
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Publication No.: US08669666B2Publication Date: 2014-03-11
- Inventor: Markus Hammer , Guenther Ruhl , Andreas Strasser , Michael Melzl , Reinhard Goellner , Doerthe Groteloh
- Applicant: Markus Hammer , Guenther Ruhl , Andreas Strasser , Michael Melzl , Reinhard Goellner , Doerthe Groteloh
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/58
Abstract:
An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.
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