Invention Grant
US08669750B2 Method of forming a semiconductor device and structure thereof 有权
形成半导体器件的方法及其结构

Method of forming a semiconductor device and structure thereof
Abstract:
A power conversion circuit and method of formation is provided, which in one embodiment includes a transistor, a driver circuit having an output connected to a control electrode of the transistor and having a bootstrap port configured to be connected to a first terminal of a capacitor; a switch circuit having a first port connected to a current carrying electrode of the transistor and having a ground port connected to a ground, a capacitor port configured to be connected to a second of the capacitor, a first switch configuration in which the capacitor port is connected to the first port, and a second switch configuration in which the capacitor port is connected to the ground port.
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