Invention Grant
- Patent Title: Method of forming a semiconductor device and structure thereof
- Patent Title (中): 形成半导体器件的方法及其结构
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Application No.: US13024721Application Date: 2011-02-10
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Publication No.: US08669750B2Publication Date: 2014-03-11
- Inventor: David Apriletti , Robert H. Fugere , Justin Larson
- Applicant: David Apriletti , Robert H. Fugere , Justin Larson
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: G05F1/00
- IPC: G05F1/00

Abstract:
A power conversion circuit and method of formation is provided, which in one embodiment includes a transistor, a driver circuit having an output connected to a control electrode of the transistor and having a bootstrap port configured to be connected to a first terminal of a capacitor; a switch circuit having a first port connected to a current carrying electrode of the transistor and having a ground port connected to a ground, a capacitor port configured to be connected to a second of the capacitor, a first switch configuration in which the capacitor port is connected to the first port, and a second switch configuration in which the capacitor port is connected to the ground port.
Public/Granted literature
- US20120206125A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF Public/Granted day:2012-08-16
Information query
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