Invention Grant
US08670269B2 Resistive memory device and method of writing data using multi-mode switching current
有权
电阻式存储器件及使用多模切换电流写入数据的方法
- Patent Title: Resistive memory device and method of writing data using multi-mode switching current
- Patent Title (中): 电阻式存储器件及使用多模切换电流写入数据的方法
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Application No.: US13609330Application Date: 2012-09-11
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Publication No.: US08670269B2Publication Date: 2014-03-11
- Inventor: Oh-Seong Kwon , Jin-Hyun Kim , Hyun-Ho Choi
- Applicant: Oh-Seong Kwon , Jin-Hyun Kim , Hyun-Ho Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0014963 20120214
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/00
Abstract:
A method of writing data in a resistive memory device includes performing a test operation to distinguish normal memory cells from weak memory cells, during a write operation directed to normal memory cells using a write current and during a weak write operation directed to weak memory cells using a higher write current.
Public/Granted literature
- US20130208535A1 RESISTIVE MEMORY DEVICE AND METHOD OF WRITING DATA USING MULTI-MODE SWITCHING CURRENT Public/Granted day:2013-08-15
Information query
