发明授权
- 专利标题： Reducing copper defects during a wet chemical cleaning of exposed copper surfaces in a metallization layer of a semiconductor device
- 专利标题（中）： 在半导体器件的金属化层中的暴露的铜表面的湿化学清洁期间减少铜缺陷
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申请号： US12124445申请日： 2008-05-21
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公开(公告)号： US08673087B2公开(公告)日： 2014-03-18
- 发明人: Frank Feustel , Tobias Letz , Christin Bartsch , Andreas Ott
- 申请人： Frank Feustel , Tobias Letz , Christin Bartsch , Andreas Ott
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 优先权： DE102007057685 20071130
- 主分类号： B08B5/04
- IPC分类号： B08B5/04
摘要：
A method for treating a semiconductor device includes dissolving an inert gas species in a wet chemical cleaning solution and treating a material layer of a semiconductor device with the wet chemical cleaning solution in ambient atmosphere. The inert gas species is oversaturated in the wet chemical cleaning solution in the ambient atmosphere.
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