- 专利标题： Superjunction structures for power devices and methods of manufacture
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申请号： US13095678申请日： 2011-04-27
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公开(公告)号： US08673700B2公开(公告)日： 2014-03-18
- 发明人: Joseph A. Yedinak , Mark L. Rinehimer , Praveen Muraleedharan Shenoy
- 申请人： Joseph A. Yedinak , Mark L. Rinehimer , Praveen Muraleedharan Shenoy
- 申请人地址： US CA San Jose
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.
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