- 专利标题: Methods of manufacturing NAND flash memory devices
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申请号: US13709131申请日: 2012-12-10
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公开(公告)号: US08673782B2公开(公告)日: 2014-03-18
- 发明人: Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
- 申请人: Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2007-0132606 20071217
- 主分类号: H01L21/308
- IPC分类号: H01L21/308
摘要:
A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
公开/授权文献
- US20130102151A1 METHODS OF MANUFACTURING NAND FLASH MEMORY DEVICES 公开/授权日:2013-04-25