Invention Grant
- Patent Title: Variable-resistance material memories and methods
- Patent Title (中): 可变电阻材料存储器和方法
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Application No.: US13723757Application Date: 2012-12-21
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Publication No.: US08674333B2Publication Date: 2014-03-18
- Inventor: Jun Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/3205
Abstract:
Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells.
Public/Granted literature
- US20130134378A1 VARIABLE-RESISTANCE MATERIAL MEMORIES AND METHODS Public/Granted day:2013-05-30
Information query
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