Invention Grant
- Patent Title: Memory elements using self-aligned phase change material layers and methods of manufacturing same
- Patent Title (中): 使用自对准相变材料层的存储元件及其制造方法
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Application No.: US13889777Application Date: 2013-05-08
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Publication No.: US08674334B2Publication Date: 2014-03-18
- Inventor: Jun Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A memory element and method of forming the same. The memory element includes a substrate supporting a first electrode, a dielectric layer over the first electrode having a via exposing a portion of the first electrode, a phase change material layer formed over sidewalls of the via and contacting the exposed portion of the first electrode, insulating material formed over the phase change material layer and a second electrode formed over the insulating material and contacting the phase change material layer.
Public/Granted literature
- US20130248810A1 MEMORY ELEMENTS USING SELF-ALIGNED PHASE CHANGE MATERIAL LAYERS AND METHODS OF MANUFACTURING SAME Public/Granted day:2013-09-26
Information query
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