Invention Grant
US08674375B2 Roughened high refractive index layer/LED for high light extraction
有权
用于高光提取的粗化高折射率层/ LED
- Patent Title: Roughened high refractive index layer/LED for high light extraction
- Patent Title (中): 用于高光提取的粗化高折射率层/ LED
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Application No.: US11187075Application Date: 2005-07-21
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Publication No.: US08674375B2Publication Date: 2014-03-18
- Inventor: Steven P. Denbaars , James Ibbetson , Shuji Nakamura
- Applicant: Steven P. Denbaars , James Ibbetson , Shuji Nakamura
- Applicant Address: US CA Goleta
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Koppel, Patrick, Heybl & Philpott
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00

Abstract:
A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer.
Public/Granted literature
- US20070018183A1 Roughened high refractive index layer/LED for high light extraction Public/Granted day:2007-01-25
Information query
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