Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US13759499Application Date: 2013-02-05
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Publication No.: US08674378B1Publication Date: 2014-03-18
- Inventor: Fu-Shin Chen , Jia-Ming Sung
- Applicant: Lextar Electronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Moser Taboada
- Priority: TW101133755A 20120914
- Main IPC: H01L21/33
- IPC: H01L21/33

Abstract:
A Light emitting diode (LED) includes a substrate, a LED chip, a wavelength conversion layer, a lens and a reflective layer. The LED chip is mounted on the substrate. The wavelength conversion layer covers the top surface of the LED chip and exposes the lateral surface of the LED chip. The lens is disposed on the substrate and encloses the LED chip and the wavelength conversion layer. The reflective layer is disposed on the lens for reflecting the light emitted from the lateral surface of the LED chip.
Public/Granted literature
- US20140077241A1 LIGHT EMITTING DIODE Public/Granted day:2014-03-20
Information query
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