Invention Grant
US08674438B2 Semiconductor devices having stressor regions and related fabrication methods
有权
具有应力区域和相关制造方法的半导体器件
- Patent Title: Semiconductor devices having stressor regions and related fabrication methods
- Patent Title (中): 具有应力区域和相关制造方法的半导体器件
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Application No.: US13765474Application Date: 2013-02-12
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Publication No.: US08674438B2Publication Date: 2014-03-18
- Inventor: Bin Yang , Man Fai Ng
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee: GLOBALFOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a gate structure overlying a region of semiconductor material, wherein the width of the gate structure is aligned with a crystal direction of the semiconductor material. The method continues by forming recesses about the gate structure and forming a stress-inducing semiconductor material in the recesses.
Public/Granted literature
- US20130153927A1 SEMICONDUCTOR DEVICES HAVING STRESSOR REGIONS AND RELATED FABRICATION METHODS Public/Granted day:2013-06-20
Information query
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