发明授权
US08674443B2 Substrate provided with a semi-conducting area associated with two counter-electrodes and device comprising one such substrate
有权
衬底设置有与两个对电极相关联的半导电区域和包括一个这样的衬底的器件
- 专利标题： Substrate provided with a semi-conducting area associated with two counter-electrodes and device comprising one such substrate
- 专利标题（中）： 衬底设置有与两个对电极相关联的半导电区域和包括一个这样的衬底的器件
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申请号： US13164164申请日： 2011-06-20
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公开(公告)号： US08674443B2公开(公告)日： 2014-03-18
- 发明人: Philippe Coronel , Claire Fenouillet-Beranger , Stephane Denorme , Olivier Thomas
- 申请人： Philippe Coronel , Claire Fenouillet-Beranger , Stephane Denorme , Olivier Thomas
- 申请人地址： FR Paris FR Crolles
- 专利权人： Commissariat à l'Energie Atomique et aux Energies Alternatives,STMicroelectronics (Crolles 2) SAS
- 当前专利权人： Commissariat à l'Energie Atomique et aux Energies Alternatives,STMicroelectronics (Crolles 2) SAS
- 当前专利权人地址： FR Paris FR Crolles
- 代理机构： Oliff PLC
- 优先权： FR1002657 20100624
- 主分类号： H01L27/12
- IPC分类号： H01L27/12
摘要：
A support substrate comprises first and second counter-electrodes arranged in the same plane at the level of a surface of the support substrate. An electrically insulating area separates the first and second counter-electrodes. A semi-conducting area with first and second portions is separated from the support substrate by an electrically insulating material. The electrically insulating material is different from the material forming the support substrate. The first portion of the semi-conducting area is facing the first counter-electrode. The second portion of the semi-conducting area is facing the second counter-electrode.
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