发明授权
US08674522B1 Castle-like chop mask for forming staggered datalines for improved contact isolation and pattern thereof 有权
用于形成交错数据库的城堡式斩波掩模,用于改善接触隔离及其图案

  • 专利标题: Castle-like chop mask for forming staggered datalines for improved contact isolation and pattern thereof
  • 专利标题(中): 用于形成交错数据库的城堡式斩波掩模,用于改善接触隔离及其图案
  • 申请号: US13649125
    申请日: 2012-10-11
  • 公开(公告)号: US08674522B1
    公开(公告)日: 2014-03-18
  • 发明人: David PrattRichard Housley
  • 申请人: David PrattRichard Housley
  • 申请人地址: TW Kueishan, Tao-Yuan Hsien
  • 专利权人: Nanya Technology Corp.
  • 当前专利权人: Nanya Technology Corp.
  • 当前专利权人地址: TW Kueishan, Tao-Yuan Hsien
  • 代理商 Winston Hsu; Scott Margo
  • 主分类号: H01L47/00
  • IPC分类号: H01L47/00
Castle-like chop mask for forming staggered datalines for improved contact isolation and pattern thereof
摘要:
The present invention provides a castle-like shaped protect or a periphery protect or a DC chop mask for forming staggered data line patterns in semiconductor devices so as to shift the adjacent data lines from one another so as to print contacts with larger areas at one end of each data line.
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