Invention Grant
- Patent Title: Memory write assist
- Patent Title (中): 内存写帮助
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Application No.: US12872135Application Date: 2010-08-31
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Publication No.: US08675418B2Publication Date: 2014-03-18
- Inventor: Jui-Jen Wu , Shau-Wei Lu , Robert Lo , Kun-Hsi Li
- Applicant: Jui-Jen Wu , Shau-Wei Lu , Robert Lo , Kun-Hsi Li
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A memory includes a memory cell, two word lines coupled to the memory cell, two bit lines coupled to the memory cell, and a write assist cell. The write assist cell is configured to transfer data of one bit line in a write operation to the other bit line in a read operation when one word line is used for the write operation, the other word line is used for the read operation, and the two word lines are asserted simultaneously.
Public/Granted literature
- US20120051151A1 MEMORY WRITE ASSIST Public/Granted day:2012-03-01
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