Invention Grant
US08679935B2 Methods of fabricating a semiconductor device having metallic storage nodes
有权
制造具有金属存储节点的半导体器件的方法
- Patent Title: Methods of fabricating a semiconductor device having metallic storage nodes
- Patent Title (中): 制造具有金属存储节点的半导体器件的方法
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Application No.: US13303500Application Date: 2011-11-23
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Publication No.: US08679935B2Publication Date: 2014-03-25
- Inventor: Mongsup Lee , Inseak Hwang , Byoung-Yong Gwak , Sukhun Choi , Sang-Jun Lee
- Applicant: Mongsup Lee , Inseak Hwang , Byoung-Yong Gwak , Sukhun Choi , Sang-Jun Lee
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2011-0020515 20110308
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
The present disclosure describes methods of fabricating a semiconductor device. An exemplary method includes forming a metal pattern on a substrate and etching the metal pattern using an etchant including at least an alkaline solution and an oxidant to form a metal electrode, where at least a portion of the surface of the metal electrode is uneven.
Public/Granted literature
- US20120231601A1 Methods of fabricating a semiconductor device having metallic storage nodes Public/Granted day:2012-09-13
Information query
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