Invention Grant
- Patent Title: Manufacturable high-k DRAM MIM capacitor structure
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Application No.: US13737467Application Date: 2013-01-09
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Publication No.: US08679939B2Publication Date: 2014-03-25
- Inventor: Sandra Malhotra , Wim Y. Deweerd , Hiroyuki Ode
- Applicant: Intermolecular Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A method for forming a capacitor stack is described. In some embodiments of the present invention, a first dielectric material is formed above a first electrode material. The first electrode material is rigid and has good mechanical strength and serves as a robust frame for the capacitor stack. The first dielectric material is sufficiently thin ( 3 nm) or lightly doped or non-doped so that it crystallizes after subsequent anneal treatments. A second electrode material is formed adjacent to the second dielectric material. The second electrode material has a high work function and a crystal structure that serves to promote the formation of the high k-value crystal structure of the second dielectric material.
Public/Granted literature
- US20130328168A1 Manufacturable High-k dram mim capacitor structure Public/Granted day:2013-12-12
Information query
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