Invention Grant
- Patent Title: Method of manufacturing graphene by using germanium layer
- Patent Title (中): 使用锗层制造石墨烯的方法
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Application No.: US12976874Application Date: 2010-12-22
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Publication No.: US08679976B2Publication Date: 2014-03-25
- Inventor: Eun-kyung Lee , Byoung-Iyong Choi , Dong-mok Whang , Jae-hyun Lee
- Applicant: Eun-kyung Lee , Byoung-Iyong Choi , Dong-mok Whang , Jae-hyun Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2010-0029509 20100331
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.
Public/Granted literature
- US20110244662A1 METHOD OF MANUFACTURING GRAPHENE BY USING GERMANIUM LAYER Public/Granted day:2011-10-06
Information query
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