Invention Grant
- Patent Title: Method for self-aligned doubled patterning lithography
- Patent Title (中): 自对准双重图案平版印刷的方法
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Application No.: US12943808Application Date: 2010-11-10
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Publication No.: US08679981B1Publication Date: 2014-03-25
- Inventor: Milind Weling , Judy Huckabay , Abdurrahman Sezginer
- Applicant: Milind Weling , Judy Huckabay , Abdurrahman Sezginer
- Applicant Address: US CA San Jose
- Assignee: Cadence Design Systems, Inc.
- Current Assignee: Cadence Design Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kenyon & Kenyon LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Various embodiments of the invention provide systems and methods for semiconductor device fabrication and generation of photomasks for patterning a target layout of line features and large features. Embodiments of the invention are directed towards systems and methods using self-aligned double pattern to define the target layout of line features and large features.
Information query
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