发明授权
- 专利标题： Mitigating the effects of defects in high temperature semiconductor wires
- 专利标题（中）： 减轻高温半导体电线缺陷的影响
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申请号： US13414811申请日： 2012-03-08
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公开(公告)号： US08680015B2公开(公告)日： 2014-03-25
- 发明人: Henry C. Valcour, III , Peter D. Antaya , John Gannon , Eric R. Podtburg , Subramaniam Anandakugan , William L. Carter , Hong Cai , Michael A. Tanner , David Crotzer , Alexander Otto , Dana Krause
- 申请人： Henry C. Valcour, III , Peter D. Antaya , John Gannon , Eric R. Podtburg , Subramaniam Anandakugan , William L. Carter , Hong Cai , Michael A. Tanner , David Crotzer , Alexander Otto , Dana Krause
- 申请人地址： US MA Devens
- 专利权人： American Superconductor Corporation
- 当前专利权人： American Superconductor Corporation
- 当前专利权人地址： US MA Devens
- 代理机构： Occhiuti & Rohlicek LLP
- 主分类号： H01L39/24
- IPC分类号： H01L39/24
摘要：
A method includes locating a defect in a first segment of high temperature superconducting wire. A second segment of high temperature superconducting wire is then positioned onto the first segment of high temperature superconducting wire such that the second segment of high temperature superconducting wire overlaps the defect. A path is then created such that current flows through the second segment of high temperature superconducting wire. The first segment of high temperature superconducting wire and second segment of high temperature superconducting wire are then laminated together.