Invention Grant
US08680618B2 Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
有权
在HiK金属栅极技术中集成前端SiCr电阻的结构和方法
- Patent Title: Structure and method for integrating front end SiCr resistors in HiK metal gate technologies
- Patent Title (中): 在HiK金属栅极技术中集成前端SiCr电阻的结构和方法
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Application No.: US13654015Application Date: 2012-10-17
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Publication No.: US08680618B2Publication Date: 2014-03-25
- Inventor: Ebenezer Eshun
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky Jr.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L49/02 ; H01L29/8605
Abstract:
An integrated circuit having a replacement HiK metal gate transistor and a front end SiCr resistor. The SiCr resistor replaces the conventional polysilicon resistor in front end processing and is integrated into the contact module. The first level of metal interconnect is located above the SiCr resistor. First contacts connect to source/drain regions. Second contacts electrically connect the first level of interconnect to either the SiCr resistor or the metal replacement gate.
Public/Granted literature
- US20130093024A1 STRUCTURE AND METHOD FOR INTEGRATING FRONT END SiCr RESISTORS IN HiK METAL GATE TECHNOLOGIES Public/Granted day:2013-04-18
Information query
IPC分类:
