发明授权
- 专利标题： Insulated gate transistor, active matrix substrate, liquid crystal display device, and method for producing the same
- 专利标题（中）： 绝缘栅晶体管，有源矩阵基板，液晶显示装置及其制造方法
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申请号： US13133212申请日： 2009-12-16
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公开(公告)号： US08681307B2公开(公告)日： 2014-03-25
- 发明人: Kiyohiro Kawasaki
- 申请人： Kiyohiro Kawasaki
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Keating & Bennett, LLP
- 优先权： JP2008-324391 20081219
- 国际申请： PCT/JP2009/070998 WO 20091216
- 国际公布： WO2010/071159 WO 20100624
- 主分类号： G02F1/13
- IPC分类号： G02F1/13 ; G02F1/136 ; G02F1/1333 ; H01L21/00 ; H01L21/302 ; H01L21/461
摘要：
According to the insulated gate transistor, a gate electrode (11A) is provided on a main surface of a glass substrate (2); a first part of an insulating layer (gate insulating layer (30) and transparent inorganic insulating layer (60)) is thicker than a second part of the insulating layer (gate insulating layer (30)), the first part being between (i) the gate electrode (11A) and (ii) a source electrode (12) and a drain electrode (21) of the insulated gate transistor, and the second part being between (i) the gate electrode (11A) and (ii) a channel section (31A) of the insulated gate transistor. This makes it possible to reduce parasitic capacitor without deteriorating characteristics of the transistor.
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