Invention Grant
US08681531B2 Memory cells, methods of forming memory cells, and methods of programming memory cells
有权
存储单元，形成存储单元的方法以及编程存储单元的方法
- Patent Title: Memory cells, methods of forming memory cells, and methods of programming memory cells
- Patent Title (中): 存储单元，形成存储单元的方法以及编程存储单元的方法
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Application No.: US13919677Application Date: 2013-06-17
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Publication No.: US08681531B2Publication Date: 2014-03-25
- Inventor: Jun Liu , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Some embodiments include methods in which a memory cell is formed to have programmable material between first and second access lines, with the programmable material having two compositionally different regions. A concentration of ions and/or ion-vacancies may be altered in at least one of the regions to change a memory state of the memory cell and to simultaneously form a pn diode. Some embodiments include memory cells having programmable material with two compositionally different regions, and having ions and/or ion-vacancies diffusible into at least one of the regions. The memory cell has a memory state in which the first and second regions are of opposite conductivity type relative to one another.
Public/Granted literature
- US20130279239A1 Memory Cells, Methods of Forming Memory Cells, and Methods of Programming Memory Cells Public/Granted day:2013-10-24
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