发明授权
- 专利标题： Memories and methods of programming memories
- 专利标题（中）： 记忆和程序记忆的方法
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申请号： US13051599申请日： 2011-03-18
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公开(公告)号： US08681562B2公开(公告)日： 2014-03-25
- 发明人: Pranav Kalavade , Akira Goda , Tommaso Vali , Violante Moschiano
- 申请人： Pranav Kalavade , Akira Goda , Tommaso Vali , Violante Moschiano
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Leffert Jay & Polglaze, P.A.
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
Apparatus and methods for adjusting programming for upper pages of memories are disclosed. In at least one embodiment, a threshold voltage distribution upper limit is determined after a single programming pulse for lower page programming, and upper page programming start voltages are adjusted based on the determined upper limit of the threshold voltage distribution.
公开/授权文献
- US20120176843A1 MEMORIES AND METHODS OF PROGRAMMING MEMORIES 公开/授权日：2012-07-12
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