Systems and methods are provided to generate soft information related to the threshold voltage of a memory cell. A range of threshold voltages for the memory cell is divided into subregions of threshold voltage values herein referred to as bins. An output of the memory cell in response to an applied reference signal is measured. The applied reference signal includes a voltage value and position information. A single bin is identified based on the position information of the reference signal. The identified bin is split into more than one bin based on the output of the memory cell and the voltage value of the reference signal. The newly split bins and all the other bins that were not split are assigned new bin indices.