Invention Grant
- Patent Title: Monocyclic high aspect ratio titanium inductively coupled plasma deep etching processes and products so produced
- Patent Title (中): 单环高宽比钛电感耦合等离子体深蚀刻工艺和产品如此生产
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Application No.: US11537743Application Date: 2006-10-02
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Publication No.: US08685266B2Publication Date: 2014-04-01
- Inventor: Emily R. Parker , Brian J. Thibeault , Marco F. Aimi , Masa P. Rao , Noel C. MacDonald
- Applicant: Emily R. Parker , Brian J. Thibeault , Marco F. Aimi , Masa P. Rao , Noel C. MacDonald
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01L21/302 ; H01L21/461

Abstract:
Monocyclic chlorine based inductively coupled plasma deep etching processes for the rapid micromachining of titanium substrates and titanium devices so produced are disclosed. The method parameters are adjustable to simultaneously vary etch rate, mask selectivity, and surface roughness and can be applied to titanium substrates having a wide variety of thicknesses to produce high aspect ratio features, smooth sidewalls, and smooth surfaces. The titanium microdevices so produced exhibit beneficially high fracture toughness, biocompatibility and are robust and able to withstand harsh environments making them useful in a wide variety of applications including microelectronics, micromechanical devices, MEMS, and biological devices that may be used in vivo.
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