发明授权
- 专利标题： Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
- 专利标题（中）： 使用氢气载气使碳和磷掺杂的硅的外延生长
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申请号： US12860236申请日： 2010-08-20
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公开(公告)号： US08685845B2公开(公告)日： 2014-04-01
- 发明人: Abhishek Dube , Ashima B. Chakravarti , Jinghong H. Li , Rainer Loesing , Dominic J. Schepis
- 申请人： Abhishek Dube , Ashima B. Chakravarti , Jinghong H. Li , Rainer Loesing , Dominic J. Schepis
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for depositing epitaxial films of silicon carbon (Si:C). In one embodiment, the method includes depositing an n-type doped silicon carbon (Si:C) semiconductor material on a semiconductor deposition surface using a deposition gas precursor composed of a silane containing gas precursor, a carbon containing gas precursor, and an n-type gas dopant source. The deposition gas precursor is introduced to the semiconductor deposition surface with a hydrogen (H2) carrier gas. The method for depositing epitaxial films may include an etch reaction provided by hydrogen chloride (HCl) gas etchant and a hydrogen (H2) carrier gas.
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