Invention Grant
- Patent Title: Heat-dissipating substrate and fabricating method thereof
- Patent Title (中): 散热基板及其制造方法
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Application No.: US12614407Application Date: 2009-11-07
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Publication No.: US08686295B2Publication Date: 2014-04-01
- Inventor: Chang Hyun Lim , Seog Moon Choi , Sang Hyun Shin , Young Ki Lee , Sung Keun Park
- Applicant: Chang Hyun Lim , Seog Moon Choi , Sang Hyun Shin , Young Ki Lee , Sung Keun Park
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: Bracewell & Giuliani LLP
- Main IPC: H05K1/00
- IPC: H05K1/00 ; H05K1/03 ; H05K1/09 ; H05K7/20

Abstract:
Disclosed herein are a heat-dissipating substrate and a fabricating method thereof. The heat-dissipating substrate includes a plating layer divided by a first insulator formed in a division area. A metal plate is formed on an upper surface of the plating layer and filled with a second insulator at a position corresponding to the division area, with an anodized layer formed on a surface of the metal plate. A circuit layer is formed on the anodized layer which is formed on an upper surface of the metal plate. The heat-dissipating substrate and fabricating method thereof achieves thermal isolation by a first insulator formed in a division area and a second insulator.
Public/Granted literature
- US20110061901A1 HEAT-DISSIPATING SUBSTRATE AND FABRICATING METHOD THEREOF Public/Granted day:2011-03-17
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