发明授权
- 专利标题： Tunnel field effect transistor and method of manufacturing same
- 专利标题（中）： 隧道场效应晶体管及其制造方法
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申请号： US13224661申请日： 2011-09-02
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公开(公告)号： US08686402B2公开(公告)日： 2014-04-01
- 发明人: Niti Goel , William Tsai , Jack Kavalieros
- 申请人： Niti Goel , William Tsai , Jack Kavalieros
- 代理商 Kenneth A. Nelson
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L29/12
摘要：
A TFET includes a source region (110, 210), a drain region (120, 220), a channel region (130, 230) between the source region and the drain region, and a gate region (140, 240) adjacent to the channel region. The source region contains a first compound semiconductor including a first Group III material and a first Group V material, and the channel region contains a second compound semiconductor including a second Group III material and a second Group V material. The drain region may contain a third compound semiconductor including a third Group III material and a third Group V material.
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