Invention Grant
- Patent Title: Tunnel field effect transistor and method of manufacturing same
- Patent Title (中): 隧道场效应晶体管及其制造方法
-
Application No.: US13224661Application Date: 2011-09-02
-
Publication No.: US08686402B2Publication Date: 2014-04-01
- Inventor: Niti Goel , William Tsai , Jack Kavalieros
- Applicant: Niti Goel , William Tsai , Jack Kavalieros
- Agent Kenneth A. Nelson
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/12
Abstract:
A TFET includes a source region (110, 210), a drain region (120, 220), a channel region (130, 230) between the source region and the drain region, and a gate region (140, 240) adjacent to the channel region. The source region contains a first compound semiconductor including a first Group III material and a first Group V material, and the channel region contains a second compound semiconductor including a second Group III material and a second Group V material. The drain region may contain a third compound semiconductor including a third Group III material and a third Group V material.
Public/Granted literature
- US20110315960A1 TUNNEL FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SAME Public/Granted day:2011-12-29
Information query
IPC分类:
