Invention Grant
- Patent Title: Double diffused drain metal oxide semiconductor device and manufacturing method thereof
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Application No.: US13555163Application Date: 2012-07-22
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Publication No.: US08686504B2Publication Date: 2014-04-01
- Inventor: Tsung-Yi Huang , Chien-Hao Huang
- Applicant: Tsung-Yi Huang , Chien-Hao Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Richtek Technology Corporation, R.O.C.
- Current Assignee: Richtek Technology Corporation, R.O.C.
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
The present invention discloses a double diffused drain metal oxide semiconductor (DDDMOS) device and a manufacturing method thereof. The DDDMOS device is formed in a substrate, and includes a first well, a gate, a diffusion region, a source, and a drain. A low voltage device is also formed in the substrate, which includes a second well and a lightly doped drain (LDD) region, wherein the first well and the diffusion region are formed by process steps which also form the second well and the LDD region in the low voltage device, respectively.
Public/Granted literature
- US20140021544A1 Double Diffused Drain Metal Oxide Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2014-01-23
Information query
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