Invention Grant
- Patent Title: Compliant monopolar micro device transfer head with silicon electrode
- Patent Title (中): 具有硅电极的单极微器件转移头
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Application No.: US13828117Application Date: 2013-03-14
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Publication No.: US08686542B2Publication Date: 2014-04-01
- Inventor: Dariusz Golda , Andreas Bibl
- Applicant: LuxVue Technology Corporation
- Applicant Address: US CA Santa Clara
- Assignee: LuxVue Technology Corporation
- Current Assignee: LuxVue Technology Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H04L21/00
- IPC: H04L21/00

Abstract:
A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.
Public/Granted literature
- US20140008813A1 COMPLIANT MONOPOLOAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODE Public/Granted day:2014-01-09
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