A plurality of memory cells are tested in order. Each time a defective memory cell is detected by the test, error pattern information is updated based on a relative arrangement relationship between a plurality of defective memory cells, and error address information is updated based on the addresses of at least part of the plurality of defective memory cells. According to the present invention, it is possible to significantly reduce the storage capacity of the analysis memory. This allows the implementation of the analysis memory itself in the semiconductor device, in which case external testers need not include the analysis memory.