Invention Grant
- Patent Title: High energy-density radioisotope micro power sources
- Patent Title (中): 高能量密度放射性同位素微电源
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Application No.: US12723370Application Date: 2010-03-12
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Publication No.: US08691404B2Publication Date: 2014-04-08
- Inventor: Jae Wan Kwon , Tongtawee Wacharasindhu , John David Robertson
- Applicant: Jae Wan Kwon , Tongtawee Wacharasindhu , John David Robertson
- Applicant Address: US MO Columbia
- Assignee: The Curators of the University of Missouri
- Current Assignee: The Curators of the University of Missouri
- Current Assignee Address: US MO Columbia
- Agency: Polster, Lieder, Woodruff & Lucchesi, LC
- Main IPC: H01M14/00
- IPC: H01M14/00 ; H01L21/20 ; H01L21/00 ; H01L21/36 ; H01L31/00

Abstract:
A method of constructing a solid-state energy-density micro radioisotope power source device. In such embodiments, the method comprises depositing the pre-voltaic semiconductor composition, comprising a semiconductor material and a radioisotope material, into a micro chamber formed within a power source device body. The method additionally includes heating the body to a temperature at which the pre-voltaic semiconductor composition will liquefy within the micro chamber to provide a liquid state composite mixture. Furthermore, the method includes cooling the body and liquid state composite mixture such that liquid state composite mixture solidifies to provide a solid-state composite voltaic semiconductor, thereby providing a solid-state high energy-density micro radioisotope power source device.
Public/Granted literature
- US20100233518A1 HIGH ENERGY-DENSITY RADIOISOTOPE MICRO POWER SOURCES Public/Granted day:2010-09-16
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