发明授权
US08691495B2 Photoresist pattern forming method, and microlens array forming method
失效
光刻胶图案形成方法和微透镜阵列形成方法
- 专利标题： Photoresist pattern forming method, and microlens array forming method
- 专利标题（中）： 光刻胶图案形成方法和微透镜阵列形成方法
-
申请号： US13593929申请日： 2012-08-24
-
公开(公告)号： US08691495B2公开(公告)日： 2014-04-08
- 发明人: Kousei Uehira , Satoshi Hirayama
- 申请人： Kousei Uehira , Satoshi Hirayama
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2011-191077 20110901
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
A photoresist pattern forming method, comprising a first step of forming on an underlayer a photoresist film which includes a convex portion and a concave portion having a thickness thinner than a thickness of the convex portion, and a second step of processing the photoresist film to form, in a portion which has been the convex portion, an opening having a width narrower than a width of the convex portion, wherein in the second step, the convex portion of the photoresist film is at least partially exposed, and the photoresist film is then developed, and exposure light is condensed by the convex portion in exposing the photoresist film.
公开/授权文献
信息查询
IPC分类:
