发明授权
US08691639B2 Manufacture methods of thin film transistor and array substrate and mask
有权
薄膜晶体管和阵列基板和掩模的制造方法
- 专利标题: Manufacture methods of thin film transistor and array substrate and mask
- 专利标题(中): 薄膜晶体管和阵列基板和掩模的制造方法
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申请号: US13484835申请日: 2012-05-31
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公开(公告)号: US08691639B2公开(公告)日: 2014-04-08
- 发明人: Weifeng Zhou , Jianshe Xue
- 申请人: Weifeng Zhou , Jianshe Xue
- 申请人地址: CN Beijing
- 专利权人: Boe Technology Group Co., Ltd.
- 当前专利权人: Boe Technology Group Co., Ltd.
- 当前专利权人地址: CN Beijing
- 代理机构: Ladas & Parry LLP
- 优先权: CN201110147134 20110601
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
Embodiments of the disclosed technology disclose manufacture methods of a thin film transistor and an array substrate and a mask therefor are provided. The manufacture method of the thin film transistor comprises: patterning a wire layer by using a exposure machine and a mask with a first exposure amount larger than a normal exposure amount during formation of source and drain electrodes; forming a semiconductor layer on the patterned wire layer; patterning the semiconductor layer by using the exposure machine and the mask with a second exposure amount smaller than the first exposure amount. The mask comprises a source region for forming the source electrode, a drain region for forming the drain electrode and a slit provided between the source region and the drain region, and the width of the slit is smaller than the resolution of the exposure machine.
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