A method for fabricating a silicon-on-insulator structure includes forming a first oxide layer on a silicon donor substrate, forming a second oxide layer on a supporting substrate, and forming a weakened zone in the donor substrate. The donor substrate is bonded to the supporting substrate by establishing direct contact between the first oxide layer on the silicon donor substrate and the second oxide layer on the supporting substrate and establishing a direct oxide-to-oxide bond therebetween. The donor substrate is split along the weakened zone to form a silicon-on-insulator structure, and the silicon-on-insulator structure is subjected to two successive rapid thermal annealing processes at temperatures T1 and T2, respectively, wherein T1 is less than or equal to T2, T1 is between 1200° C. and 1300° C., T2 is between 1240° C. and 1300° C., and when T1 is below 1240° C., then T2 is above 1240° C.