发明授权
US08691671B2 Planar nonpolar group-III nitride films grown on miscut substrates
有权
平面非极性III族氮化物薄膜生长在不同的基板上
- 专利标题： Planar nonpolar group-III nitride films grown on miscut substrates
- 专利标题（中）： 平面非极性III族氮化物薄膜生长在不同的基板上
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申请号： US13427590申请日： 2012-03-22
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公开(公告)号： US08691671B2公开(公告)日： 2014-04-08
- 发明人: Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. Denbaars , Shuji Nakamura , James S. Speck
- 申请人： Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. Denbaars , Shuji Nakamura , James S. Speck
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an α-axis direction comprising a 0.15° or greater miscut angle towards the α-axis direction and a less than 30° miscut angle towards the α-axis direction.
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