发明授权
- 专利标题： Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device
- 专利标题（中）： 第3-5组氮化物半导体的制造方法及其制造方法
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申请号： US11992653申请日： 2006-09-27
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公开(公告)号： US08691674B2公开(公告)日： 2014-04-08
- 发明人: Sadanori Yamanaka , Kazumasa Ueda , Yoshihiko Tsuchida
- 申请人： Sadanori Yamanaka , Kazumasa Ueda , Yoshihiko Tsuchida
- 申请人地址： JP Tokyo
- 专利权人： Sumitomo Chemical Company, Limited
- 当前专利权人： Sumitomo Chemical Company, Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitch, Even, Tabin & Flannery LLP
- 优先权： JP2005-283155 20050929
- 国际申请： PCT/JP2006/319822 WO 20060927
- 国际公布： WO2007/037504 WO 20070405
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/36
摘要：
A method for producing a group 3-5 nitride semiconductor includes the steps of (i), (ii), (iii) in this order: (i) placing inorganic particles on a substrate, (ii) epitaxially growing a semiconductor layer by using the inorganic particles as a mask, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light; and a method for producing a light emitting device further includes adding electrodes.
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