发明授权
US08692460B2 Highly doped electro-optically active organic diode with short protection layer 有权
具有短保护层的高掺杂电光活性有机二极管

  • 专利标题: Highly doped electro-optically active organic diode with short protection layer
  • 专利标题(中): 具有短保护层的高掺杂电光活性有机二极管
  • 申请号: US12373536
    申请日: 2007-07-13
  • 公开(公告)号: US08692460B2
    公开(公告)日: 2014-04-08
  • 发明人: Michael BuchelDietrich Bertram
  • 申请人: Michael BuchelDietrich Bertram
  • 申请人地址: NL Eindhoven
  • 专利权人: Koninklijke Philips N.V.
  • 当前专利权人: Koninklijke Philips N.V.
  • 当前专利权人地址: NL Eindhoven
  • 代理商 David Zivan; Mark Beloborodov
  • 优先权: EP06117443 20060719
  • 国际申请: PCT/IB2007/052802 WO 20070713
  • 国际公布: WO2008/010171 WO 20080124
  • 主分类号: H01L51/54
  • IPC分类号: H01L51/54
Highly doped electro-optically active organic diode with short protection layer
摘要:
An electro-optically active organic diode has anode and cathode electrodes, an electro-optically active organic layer between the electrodes, and a charge carrier organic layer between the electro-optically active organic layer and the cathode electrode layer. The charge carrier organic layer is formed of a highly doped organic semiconductor material. A short protection layer is arranged between the cathode electrode layer and the charge carrier organic layer. The short protection layer is formed of an inorganic semiconductor material.
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