发明授权
- 专利标题： Cylindrical embedded capacitors
- 专利标题（中）： 圆柱形嵌入式电容器
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申请号： US12873931申请日： 2010-09-01
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公开(公告)号： US08693163B2公开(公告)日： 2014-04-08
- 发明人: An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wen-Chih Chiou , Shin-Puu Jeng
- 申请人： An-Jhih Su , Chi-Chun Hsieh , Tzu-Yu Wang , Wei-Cheng Wu , Hsien-Pin Hu , Shang-Yun Hou , Wen-Chih Chiou , Shin-Puu Jeng
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/768
摘要：
A device includes a substrate having a front surface and a back surface opposite the front surface. A capacitor is formed in the substrate and includes a first capacitor plate; a first insulation layer encircling the first capacitor plate; and a second capacitor plate encircling the first insulation layer. Each of the first capacitor plate, the first insulation layer, and the second capacitor plate extends from the front surface to the back surface of the substrate.
公开/授权文献
- US20120049322A1 Cylindrical Embedded Capacitors 公开/授权日：2012-03-01
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