发明授权
- 专利标题： Three dimensional stacked nonvolatile semiconductor memory
- 专利标题（中）： 三维堆叠非易失性半导体存储器
-
申请号： US13460134申请日： 2012-04-30
-
公开(公告)号： US08693250B2公开(公告)日： 2014-04-08
- 发明人: Hiroshi Maejima
- 申请人： Hiroshi Maejima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-112656 20080423
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A three dimensional stacked nonvolatile semiconductor memory according to examples of the present invention includes a memory cell array comprised of first and second blocks disposed side by side and a driver disposed between the first and second blocks. At least two conductive layers having the same structure as that of the at least two conductive layers in the first and second blocks are disposed on the driver, and select gate lines in the first and second blocks are connected to the driver through the at least two conductive layers on the driver.
公开/授权文献
信息查询
