Invention Grant
US08693251B2 Processors for programming multilevel-cell NAND memory devices 有权
用于编程多电平单元NAND存储器件的处理器

Processors for programming multilevel-cell NAND memory devices
Abstract:
In an embodiment, a processor includes a storage device. The processor is configured to request first data from a first location of a memory device. The storage device is configured to receive and to store the first data from the memory device. The processor is configured to attempt to write second data to the first location of the memory device. The processor is configured to write the first data stored in the storage device and the second data to one or more other locations of the memory device if the attempt to write second data to the first location of the memory device fails.
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