Invention Grant
US08693251B2 Processors for programming multilevel-cell NAND memory devices
有权
用于编程多电平单元NAND存储器件的处理器
- Patent Title: Processors for programming multilevel-cell NAND memory devices
- Patent Title (中): 用于编程多电平单元NAND存储器件的处理器
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Application No.: US13413119Application Date: 2012-03-06
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Publication No.: US08693251B2Publication Date: 2014-04-08
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
In an embodiment, a processor includes a storage device. The processor is configured to request first data from a first location of a memory device. The storage device is configured to receive and to store the first data from the memory device. The processor is configured to attempt to write second data to the first location of the memory device. The processor is configured to write the first data stored in the storage device and the second data to one or more other locations of the memory device if the attempt to write second data to the first location of the memory device fails.
Public/Granted literature
- US20120166720A1 PROCESSORS FOR PROGRAMMING MULTILEVEL-CELL NAND MEMORY DEVICES Public/Granted day:2012-06-28
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