Invention Grant
- Patent Title: Semiconductor surface light-emitting element and method of manufacturing thereof
- Patent Title (中): 半导体表面发光元件及其制造方法
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Application No.: US13812561Application Date: 2011-06-21
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Publication No.: US08693516B2Publication Date: 2014-04-08
- Inventor: Kazuyoshi Hirose , Shinichi Furuta , Akiyoshi Watanabe , Takahiro Sugiyama , Kousuke Shibata , Yoshitaka Kurosaka , Susumu Noda
- Applicant: Kazuyoshi Hirose , Shinichi Furuta , Akiyoshi Watanabe , Takahiro Sugiyama , Kousuke Shibata , Yoshitaka Kurosaka , Susumu Noda
- Applicant Address: JP Hamamatsu-shi, Shizuoka JP Kyoto-shi, Kyoto
- Assignee: Hamamatsu Photonics K.K.,Kyoto University
- Current Assignee: Hamamatsu Photonics K.K.,Kyoto University
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka JP Kyoto-shi, Kyoto
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2010-172578 20100730
- International Application: PCT/JP2011/064181 WO 20110621
- International Announcement: WO2012/014604 WO 20120202
- Main IPC: H01S5/183
- IPC: H01S5/183

Abstract:
A semiconductor surface light-emitting element of this invention is provided with a photonic crystal layer 6 obtained by periodically forming a plurality of holes H in a basic layer 6A comprised of a first compound semiconductor of the zinc blend structure and growing embedded regions 6B comprised of a second compound semiconductor of the zinc blend structure, in the holes H, and an active layer 4 to supply light to the photonic crystal layer 6, in which a principal surface of the basic layer 6A is a (001) plane and in which side faces of each hole H have at least three different {100} facets.
Public/Granted literature
- US20130121358A1 SEMICONDUCTOR SURFACE LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2013-05-16
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