Invention Grant
- Patent Title: Method for determining critical junction temperature
- Patent Title (中): 确定关键结温的方法
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Application No.: US13802181Application Date: 2013-03-13
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Publication No.: US08694939B1Publication Date: 2014-04-08
- Inventor: Alan M. Frost , Matthew H. Klein , Ronald L. Cline
- Applicant: Xilinx, Inc.
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent Gerald Chan
- Main IPC: G06F17/50
- IPC: G06F17/50
Abstract:
A method for determining a critical junction temperature for a user-design implemented in a field programmable gate array (programmable device), includes: obtaining a static power vs. temperature curve for the user-design implemented in the programmable device; obtaining a system thermal curve for the user-design implemented in the programmable device; and using the static power vs. temperature curve for the user-design implemented in the programmable device and the system thermal curve for the user-design implemented in the programmable device to determine the critical junction temperature.
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